| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser being a semiconductor device having advantages such as elimination of complex process, high yield rate, mass productivity required for cost reduction, excellent initial characteristics and reliability. SOLUTION: A nitride semiconductor layer including a plurality of group III elements is formed on an uneven surface of a substrate so that at least one of composition ratios of the group III elements in the nitride semiconductor layer, band gap energy, refractive index, electrical conductivity and resistivity is changed in the layer in response to unevenness of the substrate. The controllability and yield rate are improved by utilizing a layer containing aluminum heated in a hydrogen atmosphere without being influenced by etching depth variations. Additionally, this method enables continuous etching and regrowth so that a low cost process is achieved. COPYRIGHT: (C)2008,JPO&INPIT
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