METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to prevent the short between a storage node and a bit line by using an amorphous carbon film as an etching barrier and a polishing stop film. A method for manufacturing a semiconductor device includes the steps of: forming a bit line where a conductive film(23), a hard mask film(24), and an amorphous carbon film are laminated successively on a semiconductor substrate(21); evaporating an interlayer insulating film(22) on the resultant for filling a space between the bit lines; performing CMP(Chemical Mechanical Polishing) of the interlayer insulating film for exposing the amorphous carbon film; forming a second mask pattern defining a storage node contact hole forming region on the resultant; forming a node contact hole by etching the interlayer insulating film(22) using the second mask pattern as an etching mask; removing the second mask pattern and the amorphous carbon film; forming a plug conductive film(28) on the resultant for burying the storage node contact hole; and performing the CPM of the plug conductive film until a nitride film is exposed.