| 发明名称 |
BSZT DIELECTRIC, CAPACITOR, NON-VOLATILE MEMORY, AND MANUFACTURING METHOD OF THEM |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To deposit BSZT on SrTiO<SB>3</SB>STO and Pt as a perovskite single phase by a PLA method by pulsed laser irradiation by using Ba, SrZr and TiO<SB>3</SB>BSZT as a new material which does not comprise lead and bismuth, and which has less harmful property; and to manufacture a MIM-type element using BSZT. <P>SOLUTION: In a thin film test piece, BSZT/Pt/STO is formed where Pt3 and BSZT2 are deposited on a STO substrate 1 by the PLA method by pulsed laser irradiation. BSZT2 is formed where <100>, <110> and <111> are multi-shaft-oriented on a lower electrode Pt3. Au4 is vapor-deposited as an upper electrode by vacuum deposition. The MIM-type element is manufactured with Au/BSZT/Pt/STO. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
| 申请公布号 |
JP2007258252(A) |
申请公布日期 |
2007.10.04 |
| 申请号 |
JP20060077390 |
申请日期 |
2006.03.20 |
| 申请人 |
KANAZAWA UNIV |
发明人 |
MORIMOTO AKIJI;KAWAE TAKESHI;NISHIMURA KEISUKE |
| 分类号 |
H01L21/316;C23C14/08;H01B3/12;H01L21/822;H01L21/8246;H01L27/04;H01L27/105;H01L41/187;H01L41/316;H01L41/39 |
主分类号 |
H01L21/316 |
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