| 摘要 |
PROBLEM TO BE SOLVED: To provide a multilayered wiring structure of a semiconductor device excellent in performance of preventing diffusion of metal constituting a metallic wire and excellent in insulation, an effective dielectric constant or the like. SOLUTION: The semiconductor device includes an insulation layer provided on a semiconductor substrate, a wiring layer having the metallic wire buried with a surface opposite to the semiconductor substrate exposed in the insulation layer, and a barrier insulation layer for preventing diffusion of the metal constituting the metallic wire on the surface having the metallic wire exposed. The barrier insulation layer includes a first barrier insulation layer made of a silane compound, and a second barrier insulation layer formed on the first barrier insulation layer. COPYRIGHT: (C)2008,JPO&INPIT
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