METHOD OF FORMING CAPACITOR

摘要

A method for fabricating a capacitor is provided to prevent a lower electrode from collapsing by removing mold oxide layers and a sacrificial oxide layer pattern while using a fluorine-based solvent and by performing a rinse process and a dry process. A mold oxide layer is formed on a semiconductor substrate(1). The mold oxide layer is patterned to form a storage node hole. The sidewall and the bottom of the storage node hole are covered with a lower electrode(17a). The mold oxide layer is eliminated by using a fluorine-based solvent and fluorine-based etchant. A rinse process is performed by using a fluorine-based solvent. A dielectric layer and an upper electrode are formed.