| 摘要 |
A semiconductor laser device and a manufacturing method thereof are provided to optimize active layers and cladding layers of two laser elements simultaneously by restraining the unbalance of distribution of impurities. A semiconductor laser apparatus includes a first semiconductor laser element(110), and a second semiconductor laser element(120). The first semiconductor laser element(110) is formed on a substrate(101) and operates to emit light of a first wavelength. The second semiconductor laser element(120) operates to emit light of a second wavelength. Each of the first and second semiconductor laser elements(110,120) has a double-hetero structure in which a cladding layer(103,113) of a first conductive type, an active layer(104,114), a cladding layer(105,115) of a second conductive type, and a contact layer(109,119) are sequentially laminated. The first and second semiconductor laser elements(110,120) have the contact layers(109,119) of different thicknesses. |
