| 摘要 |
An insulating substrate board for a semiconductor of the present invention comprises a ceramic substrate board ( 2 ) and a metal alloy layer ( 3 ) consisting of aluminum formed on one surface portion of the ceramic substrate board ( 2 ), wherein the Vickers hardness of the metal alloy layer ( 3 ) is not less than 25 and not more than 40. The metal alloy layer ( 3 ) includes silicon of not less than 0.2% by weight and not more than 5% by weight. The ceramic substrate board ( 2 ) is made of a material selected from a group consisting of alumina. aluminum nitride, and silicon nitride. A power module of the present invention comprises a metal base plate ( 7 ), a ceramic substrate board ( 2 ), one surface of which is bonded to the metal base plate ( 7 ), and the other surface of which is bonded on a semiconductor tip ( 1 ), at least one surface portion of the ceramic substrate board ( 2 ) having a metal alloy layer ( 3 ) consisting of aluminum, wherein the Vickers hardness of the metal alloy layer ( 3 ) is not less than 25 and not more than 40. |
