发明名称 |
POWER SEMICONDUCTOR DEVICE |
摘要 |
<p>Disclosed is a power semiconductor device wherein a reaction hardly occurs between a metal material of wiring and an electrode or the like connected to a semiconductor region during high temperature operations. In this power semiconductor device, strain is hardly generated during high temperature operations. Specifically disclosed is a power semiconductor device such as an SiC power device wherein a first metal layer (14) containing at least one of Pt, Ti, Mo, W and Ta is formed on a source electrode (11) which is formed on a semiconductor region such as a source region (4). A second metal layer (15) containing at least one of Mo, W and Cu is formed on the first metal layer (14). A third metal layer (16) containing at least one of Pt, Mo and W is formed on the second metal layer (15).</p> |
申请公布号 |
WO2007108439(A1) |
申请公布日期 |
2007.09.27 |
申请号 |
WO2007JP55514 |
申请日期 |
2007.03.19 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION;OHTSUKA, KENICHI;MIURA, NARUHISA;IMAIZUMI, MASAYUKI;OOMORI, TATSUO |
发明人 |
OHTSUKA, KENICHI;MIURA, NARUHISA;IMAIZUMI, MASAYUKI;OOMORI, TATSUO |
分类号 |
H01L21/28;H01L29/12;H01L29/417;H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|