| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a group III-V nitride based semiconductor substrate having a high-quality AlN layer with good crystallinity or a similar layer having high thermal conductivity on the surface, to provide a group III-V nitride based device using the above substrate and having excellent heat radiation property and high output, and to provide a method for inexpensively manufacturing the same with high reproducibility. <P>SOLUTION: A composite self-standing substrate 10 is obtained by forming an AlN layer 12 on a GaN layer 11 and polishing the top face of the AlN layer 12 and the back face of the GaN layer 11 into flat faces. A light emitting device is obtained by fabricating a device structure on the composite self-standing substrate 10 and removing the GaN layer 11 by back lapping from back face of the GaN layer 11 until reaching the AlN layer 12. <P>COPYRIGHT: (C)2007,JPO&INPIT |
