| 摘要 |
A method of manufacturing a silicon layer includes pretreating a surface of a silicon nitride layer formed on a substrate through a plasma enhanced chemical vapor deposition method using a first reaction gas including at least one of silicone tetrafluoride (SiF<SUB>4</SUB>) gas, a nitrogen trifluoride (NF<SUB>3</SUB>) gas, SiF<SUB>4</SUB>-H<SUB>2 </SUB>gas and a mixture thereof Then, a silicon layer is formed on the pretreated silicon nitride layer through the plasma enhanced chemical vapor deposition method using a second reaction gas including a mixture of gas including silicon tetrfluoride (SiF<SUB>4</SUB>), hydrogen (H<SUB>2</SUB>) and argon (Ar),
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