发明名称 |
NITRIDE SEMICONDUCTOR LED AND FABRICATION METHO THEREOF |
摘要 |
<p>A nitride semiconductor light emitting diode according to the present invention, includes: a substrate; a buffer layer formed on the substrate; an In-doped GaN layer formed on the buffer layer; a first electrode layer formed on the In-doped GaN layer; an InxGai-xN layer formed on the first electrode layer; an active layer formed on the InxGai-xN layer; a first P-GaN layer formed on the active layer; a second electrode layer formed on the first P-GaN layer; a second P-GaN layer partially protruded on the second electrode layer; and a third electrode formed on the second P-GaN layer.</p> |
申请公布号 |
WO2007102627(A1) |
申请公布日期 |
2007.09.13 |
申请号 |
WO2005KR02173 |
申请日期 |
2005.07.06 |
申请人 |
LG INNOTEK CO., LTD;LEE, SUK-HUN |
发明人 |
LEE, SUK-HUN |
分类号 |
H01L33/06;H01L33/12;H01L33/32;H01L33/42;H01L33/44 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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