| 摘要 |
A semiconductor device prevents diffusion of electric charges retained in silicon nitride films of a MOSFET during a writing operation and has a favorable charge retention property. The silicon nitride films, each of which functions as a memory functional body, are formed at a thickness of 100 Å at a maximum. Each of the silicon nitride film dose not exist on each side surfaces of a gate electrode but exists only on each silicon oxide films between the gate electrode and a substrate, so that each of the silicon nitride films is small in volume.
|
