发明名称 METHOD OF DICING SEMICONDUCTOR WAFER
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method of dicing a semiconductor wafer which can improve yield and quality of a product. <P>SOLUTION: On an external circumferential end Eg, laser output is set at minimum Pmin, and on a border portion Rmax, the laser output is set at maximum Pmax. On a portion between the external circumferential end Eg and the border portion Rmax, in the relation with a position from the external circumferential end Eg toward the border portion Rmax, the laser output is set so as to linearly increase in relation to a proportional function between the Pmin to the Pmax, and in the relation with a position from the border portion Rmax toward the external circumferential end Eg, the laser output is set so as to linearly decrease in relation to the proportional function between the Pmax to the Pmin. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2007227768(A) 申请公布日期 2007.09.06
申请号 JP20060048611 申请日期 2006.02.24
申请人 DENSO CORP;HAMAMATSU PHOTONICS KK 发明人 KOMURA ATSUSHI;TAMURA MUNEO;SUGIURA KAZUHIKO;FUJII TETSUO;KUNO KOJI
分类号 H01L21/301;B23K26/00;B23K26/38;B23K26/40;B23K101/40 主分类号 H01L21/301
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