| 摘要 |
A semiconductor device and a fabricating method thereof are provided to prevent unintended decrease in a thickness of Si layer in an SOI forming regions by reducing a degree of dishing in the SOI forming regions. An isolation layer(13) is formed in a planar shape to define a space between an SOI(Silicon-On Insulator) forming region(1a) and an SOI forming region(1c) which are formed to surround a device forming region(10) and a space between an SOI forming region(1b) and an SOI forming region(1d). An epi-polysilicon layer(24) serving as a stopper in chemical mechanical polishing has a shape similar to that of the isolation layer. When an SiO2 layer(43) is subjected to the chemical mechanical polishing, the epi-polysilicon layer is disposed in dense adjacent to the SOI forming regions.
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