| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to prevent voids between bit lines in gap-filling an interlayer dielectric and to improve reliability by controlling etching gas and bias power in performing an etching of a metal layer. A barrier layer(104) and a metal layer(106) are sequentially formed on an upper of a semiconductor substrate(100) having a predetermined structure. Parts of the metal layer and the barrier layer are etched to form a metal layer pattern that is inclined. An interlayer dielectric is formed on the resultant structure and then planarized. The barrier layer is formed with one of Ti, TiN, or a laminated structure of Ti and TiN. The metal layer is formed with Al or W. The etching process of the metal layer is performed by controlling bias power and an etching gas being injected into a chamber.</p> |
