| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor package in which two wafers are accurately aligned in position while a surface activation joining method is employed which does not cause thermal distortion. SOLUTION: A first wafer 1 and a second wafer 2 include joints 13 and 23 joined with each other, and non-joining parts 14 and 24 having aligning means 19 and 29 for guiding a joining position. The non-joining part 14 of the first wafer 1 includes a leg 11 where the joint 13 forms a space for the non-joining part 14, and a bend 15 where a groove bent from the joint 13 is formed. While the two non-joining parts 14 and 24 are shielded, only the joints 13 and 23 are surface-activated by an ion beam. Thereafter, the joining positions of the first wafer 1 and the second wafer 2 are aligned by the aligning means 19 and 29, and pressure is applied to the joint 13 from a surface opposite to the joining surface of the joint 13, thereby bending the bend 15 from the joint 13. Thus, the joints 13 and 23 are brought into contact with each other to be surface-activation-joined. COPYRIGHT: (C)2007,JPO&INPIT
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