| 摘要 |
PROBLEM TO BE SOLVED: To provide a heater holding superior temperature uniformity on a wafer, while minimizing the possibility of deterioration and breakdown during operation, and exhibiting superior etch-resistance during the lifetime extended in operation. SOLUTION: An etch resistant heater for use in a wafer processing assembly has a superior ramp rate of at least 20°C per minute, maximum temperature difference across the surface (for example, >100°C over 300 mm), and at least one electrode. The heater is coated with a protective overcoating layer, allowing the heater to have a radiation efficiency above 70% at elevated heater temperatures of >1,500°C, and the etching rate in NF<SB>3</SB>at 600°C and smaller than 100Å/min. COPYRIGHT: (C)2007,JPO&INPIT
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