发明名称 Method of manufacturing semiconductor device with crack prevention ring
摘要 A crack prevention ring at the exterior edge of an integrated circuit prevents delamination and cracking during the separation of the integrated circuits into individual die. The crack prevention ring extends vertically into a semiconductor workpiece to at least a metallization layer of the integrated circuit. The crack prevention ring may be formed simultaneously with the formation of test pads of the integrated circuits. The crack prevention ring may be partially or completely filled with conductive material. An air pocket may be formed within the crack prevention ring beneath a passivation layer of the integrated circuit. The crack prevention ring may be removed during the singulation process.
申请公布号 US2007194409(A1) 申请公布日期 2007.08.23
申请号 US20070788208 申请日期 2007.04.19
申请人 发明人 WANG PING-WEI;WU CHII-MING M.
分类号 H01L23/544 主分类号 H01L23/544
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