| 摘要 |
Operating NVM memory cell such as an NROM cell by using a combination of Fowler-Nordheim tunneling (FNT), hot hole injection (HHI), and channel hot electron (CHE) injection. In the FNT erase step, only a few cells may be verified, and in the CHE second programming step, the threshold voltage of those cells which were not fully erased in the FNT erase step is increased to a high threshold voltage level (ERS state).
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