发明名称 METHOD OF FORMING GATED, SELF-ALIGNED MICRO-STRUCTURES AND NANO-STRUCTURES
摘要 <p>Methods of forming a gated, self-aligned nano-structures for electron extraction are disclosed. One method of forming the nano-structure comprises irradiating a first surface of a thermally conductive laminate to melt an area across the first surface of the laminate. The laminate comprises a thermally conductive film and a patterned layer disposed on the first surface of the film. The patterned layer has a pattern formed therethrough, defining the area for melting. The film is insulated at a second surface thereof to provide two-dimensional heat transfer laterally in plane of the film. The liquid density of the film is greater than the solid density thereof. The method further comprises cooling the area inwardly from the periphery thereof to form the nano-structure having an apical nano-tip for electron emission centered in an electrically isolated aperture that serves as a gate electrode to control electron extraction in a gated field emitter device.</p>
申请公布号 WO2007092499(A2) 申请公布日期 2007.08.16
申请号 WO2007US03256 申请日期 2007.02.05
申请人 WAYNE STATE UNIVERSITY;BAIRD, RONALD, J.;GEORGIEV, DANIEL, G.;AVRUTSKY, IVAN;NEWAZ, GOLAM;AUNER, GREGORY, W. 发明人 BAIRD, RONALD, J.;GEORGIEV, DANIEL, G.;AVRUTSKY, IVAN;NEWAZ, GOLAM;AUNER, GREGORY, W.
分类号 主分类号
代理机构 代理人
主权项
地址