| 摘要 |
<p>A metal line structure of a semiconductor device and its manufacturing method are provided to prevent increase of a dielectric constant of an interlayer dielectric by forming a barrier layer pattern for preventing diffusion of fluorine. An upper interlayer dielectric pattern(10) contains fluorine(F). An upper metal line(20) is formed by passing through the upper interlayer dielectric pattern. A lower interlayer dielectric pattern(30) includes a barrier layer pattern(34), a bonding layer pattern(36), and a silicon oxy carbide layer pattern(38). The barrier layer pattern is arranged on a lower portion of the upper interlayer dielectric pattern and prevents diffusion of the fluorine. The bonding layer pattern is arranged on a lower portion of the barrier layer pattern. The silicon oxy carbide layer pattern is arranged on a lower portion of the bonding layer pattern. A lower metal line(40) passes through the lower interlayer dielectric pattern and is connected to the upper metal line.</p> |
