发明名称 Two-stage process to dope a semiconductor by atomization of alcoholized droplets followed by heating
摘要 <p>In a two-stage process to dope a semiconductor, a titanium dioxide nano-structure layer is applied to a metal substrate of e.g. titanium and simultaneously doped with carbon. In the first stage an alcoholic solution of metal salts is atomized and directed onto a heated and temperature-controlled substrate, where it is hydrolized by controlled exposure to water vapor. The alcoholized droplets incorporate an organic substance e.g. glucose that dopes the semiconductor on second-stage heating.</p>
申请公布号 DE102006007267(A1) 申请公布日期 2007.08.16
申请号 DE20061007267 申请日期 2006.02.09
申请人 JAENICKE, RENE NIKOLAI;HAUG, HELMAR 发明人 JAENICKE, RENE NIKOLAI;HAUG, HELMAR
分类号 C23C16/56;C23C16/448;H01L21/22 主分类号 C23C16/56
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