发明名称 |
Two-stage process to dope a semiconductor by atomization of alcoholized droplets followed by heating |
摘要 |
<p>In a two-stage process to dope a semiconductor, a titanium dioxide nano-structure layer is applied to a metal substrate of e.g. titanium and simultaneously doped with carbon. In the first stage an alcoholic solution of metal salts is atomized and directed onto a heated and temperature-controlled substrate, where it is hydrolized by controlled exposure to water vapor. The alcoholized droplets incorporate an organic substance e.g. glucose that dopes the semiconductor on second-stage heating.</p> |
申请公布号 |
DE102006007267(A1) |
申请公布日期 |
2007.08.16 |
申请号 |
DE20061007267 |
申请日期 |
2006.02.09 |
申请人 |
JAENICKE, RENE NIKOLAI;HAUG, HELMAR |
发明人 |
JAENICKE, RENE NIKOLAI;HAUG, HELMAR |
分类号 |
C23C16/56;C23C16/448;H01L21/22 |
主分类号 |
C23C16/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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