NONVOLATILE MEMORY DEVICE, AND METHOD OF MANUFACTURING SAME

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile memory device capable of operating more stably. SOLUTION: The device comprises a source region formed in a semiconductor substrate, a gate insulating film formed so as to overlap with part of the source region, a floating gate having a structure for forming an electric field constantly in a region that overlaps with the source region and formed on the upper part of the gate insulating film, a control gate formed in an insulating state along one sidewall of the floating gate from the upper part of the floating gate, an insulating film between gates interposed between the floating gate and the control gate, and a drain region formed adjacent to the other side of the control gate. COPYRIGHT: (C)2007,JPO&INPIT