发明名称 SEMICONDUCTOR MEMORY DEVICE BEING CAPABLE OF TESTING HIGH FREQUENCY CIRCUIT IN WAFER STATE
摘要 A semiconductor memory device is provided to test a high frequency circuit in a wafer state, by changing a multiplication mode of a phase locked loop circuit into an x1 mode in response to a test signal. In a semiconductor memory device in a wafer state, a high frequency circuit receives a test clock from a wafer test apparatus(210). A mode register(223) receives a test signal from the wafer test apparatus, and changes a multiplication mode of the high frequency circuit so that the high frequency circuit is operated in response to the test clock. The high frequency circuit is a delay locked loop circuit.
申请公布号 KR20070077699(A) 申请公布日期 2007.07.27
申请号 KR20060007425 申请日期 2006.01.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, JAE HYUNG
分类号 G11C29/00;G11C16/06;H01L21/66 主分类号 G11C29/00
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