发明名称 |
SEMICONDUCTOR MEMORY DEVICE BEING CAPABLE OF TESTING HIGH FREQUENCY CIRCUIT IN WAFER STATE |
摘要 |
A semiconductor memory device is provided to test a high frequency circuit in a wafer state, by changing a multiplication mode of a phase locked loop circuit into an x1 mode in response to a test signal. In a semiconductor memory device in a wafer state, a high frequency circuit receives a test clock from a wafer test apparatus(210). A mode register(223) receives a test signal from the wafer test apparatus, and changes a multiplication mode of the high frequency circuit so that the high frequency circuit is operated in response to the test clock. The high frequency circuit is a delay locked loop circuit.
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申请公布号 |
KR20070077699(A) |
申请公布日期 |
2007.07.27 |
申请号 |
KR20060007425 |
申请日期 |
2006.01.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, JAE HYUNG |
分类号 |
G11C29/00;G11C16/06;H01L21/66 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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