| 发明名称 |
Semiconductor device and method for manufacturing the same |
| 摘要 |
The present invention provides a high-quality semiconductor device in which deterioration in transistor characteristics and an increase in interface layer due to a gate insulating film are suppressed, and a method for manufacturing the same. In the present invention, an interface layer, a diffusion suppressing layer and a high dielectric constant insulating film are formed sequentially in this order on one surface of a silicon substrate.
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| 申请公布号 |
US2007170502(A1) |
申请公布日期 |
2007.07.26 |
| 申请号 |
US20040550645 |
申请日期 |
2004.03.18 |
| 申请人 |
KOJI TOMINAGA;KUNIHIKO IWAMOTO;TETSUJI YASUDA;TOSHIHIDE NABATAME |
发明人 |
KOJI TOMINAGA;KUNIHIKO IWAMOTO;TETSUJI YASUDA;TOSHIHIDE NABATAME |
| 分类号 |
H01L21/318;H01L27/12;H01L21/02;H01L21/28;H01L21/314;H01L21/316;H01L29/51;H01L29/78 |
主分类号 |
H01L21/318 |
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