| 摘要 |
PROBLEM TO BE SOLVED: To realize a semiconductor device having an excellent area efficiency and a superior latch-up resistance. SOLUTION: The semiconductor device protecting a circuit to be protected has a first thyristor 10 and a second thyristor 20 formed between a first terminal 1 as a power terminal or an I/O terminal and a second terminal 2 as a ground terminal. The first thyristor 10 has a first pnp transistor 11, a first npn transistor 12 and a resistor 13. The second thyristor 20 has a second npn transistor 21 and second/third pnp transistors 22. COPYRIGHT: (C)2007,JPO&INPIT
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