发明名称 |
Semiconductor device using a conductive film and method of manufacturing the same |
摘要 |
A semiconductor device has a capacitive element including a first conductive film formed on the bottom and wall surfaces of an opening formed in an insulating film on a substrate, a dielectric film formed on the first conductive film, and a second conductive film formed on the dielectric film. The dielectric film of the capacitive element is crystallized. The first and second conductive films are made of a polycrystal of an oxide, a nitride or an oxynitride of a noble metal.
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申请公布号 |
US7244982(B2) |
申请公布日期 |
2007.07.17 |
申请号 |
US20060487969 |
申请日期 |
2006.07.18 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NATSUME SHINYA;HAYASHI SHINICHIRO |
分类号 |
H01L27/108;H01L21/02;H01L21/316;H01L21/8242;H01L27/105;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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