发明名称 |
SUBSTRATE ALIGN EQUIPMENT USING CIRCULAR MOIRE PATTERNS FOR NANO-IMPRINT PROCESS |
摘要 |
<p>A substrate aligning apparatus using circular moire in a nano-imprinting process is provided to accurately deposit a pattern of a mask on a substrate by analyzing moire pattern and thus calculating an error value. An error detecting system(10) forms at least two lattices which have different diameter and are arranged in a concentric type on a mask and a wafer, in which a mask lattice(20) and a wafer lattice(30) are overlapped to form moire patterns. The mask lattices and the wafer lattices are photographed to obtain the circular moire patterns. The obtained circular moire patterns are analyzed by using mathematic algorithm to calculate an error value. The mask lattice and the wafer lattice have different pitches.</p> |
申请公布号 |
KR100740995(B1) |
申请公布日期 |
2007.07.12 |
申请号 |
KR20060070177 |
申请日期 |
2006.07.26 |
申请人 |
KOREA INSTITUTE OF MACHINERY & MATERIALS |
发明人 |
KIM, GEE HONG;LEE, JAE JONG;CHOI, KEE BONG |
分类号 |
H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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