| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-power arrayed semiconductor laser device in which any stress is hardly produced in a semiconductor laser array, and gaps among members constituting the laser device itself are made uniform in size so as to enable the semiconductor laser device to display its high reliability. SOLUTION: A semiconductor laser array 1 of 5 mm in width is bonded on a base material 15 through the intermediary of a stress relaxing material 14. The semiconductor laser array 1 is set at 5 mm in width, so that stress produced in the semiconductor laser array 1 can be reduced to zero even when the warpage of the laser array 1 amounts to 5μm in amount. Stress is hardly produced in the semiconductor laser array 1, the gaps among the members constituting the laser array 1 are made uniform in size, and the semiconductor laser array 1 can be uniformly cooled down so that the array semiconductor laser device having a long service life and displaying its high reliability can be obtained. COPYRIGHT: (C)2007,JPO&INPIT
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