| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of realizing a desired hfe value (DC current amplification factor) by suppressing surface recombination of free carriers (holes). SOLUTION: In this semiconductor device, an n-type epitaxial layer 4 is stacked on a p-type single crystalline silicon substrate 2. An n-type diffusion layer 5 as a base leading-out region, p-type diffusion layers 6, 7 as an emitter region, and p-type diffusion layers 8, 9 as a collector region are formed on the epitaxial layer 4. The emitter region has a region of a wider diffusion width in the depth rather than its vicinity of the surface, and a lateral pnp transistor 1 has the smallest base width in a deep portion of the epitaxial layer 4. COPYRIGHT: (C)2007,JPO&INPIT
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