| 摘要 |
A method for forming a contact plug of a semiconductor device is provided to prevent the generation of not open and overlap fail by securing a contact open margin and a contact align margin using two-step metal contact forming processes. A first insulating layer is formed on a semiconductor substrate(31) with a bit line electrode pattern. A first metal contact hole(38) for exposing the bit line electrode pattern to the outside is formed on the resultant structure by etching selectively the first insulating layer. A first metal contact plug(39) is formed in the first metal contact hole. A second insulating layer is formed on the resultant structure. A second metal contact hole(46) for exposing the first metal contact plug to the outside is formed on the resultant structure by etching selectively the second insulating layer. A second metal contact plug(47) is formed in the second metal contact hole.
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