| 摘要 |
PROBLEM TO BE SOLVED: To reduce the warpage of a semiconductor substrate caused by a passivation film, in a manufacturing apparatus of a semiconductor device having the passivation film that covers a semiconductor integrated circuit and a scribed region. SOLUTION: A lattice-shaped trench 47 is formed in the passivation film 13 provided on a scribed region B so as to surround a plurality of circuit formation regions A. COPYRIGHT: (C)2007,JPO&INPIT |
