| 摘要 |
A test pattern for a photodiode in a vertical-type CMOS image sensor is provided to electrically estimate a thickness of a first epitaxial and a thickness of a second epitaxial layer by measuring the leakage current between photodiodes. A vertical-type image sensor includes first, second and third photodiodes which are disposed on a substrate. A test pattern for a photodiode includes first to third metal pad terminals for testing the first to third photodiodes each formed at a different position. Ground terminals are spaced apart form the first to third metal pad terminals. The first photodiode is formed on the substrate, the second photodiode is formed on a first epitaxial layer, and the third photodiode is formed on a second epitaxial layer.
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