| 摘要 |
A method for fabricating a high-voltage bipolar CMOS device is provided to secure a distance between adjacent DUF regions by preventing ions implanted into the DUF region from being diffused into an adjacent region. A predetermined region of a semiconductor substrate(100) is patterned to form a reverse DUF(Diffusion Under Fill) region, and then a DUF region(160) is formed in the substrate at a position adjacent to the reverse DUF region. A spacer(152) is formed on a sidewall of the reverse DUF region, and then an epitaxial layer(180) is formed on the entire surface of the substrate. A well region is formed at a position adjacent to the DUF region.
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