| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor array substrate, along with its manufacturing method, capable of improving the picture quality while increasing the storage capacity of a storage capacitor. SOLUTION: A thin film transistor 6 is connected to a pixel electrode 18 formed on a substrate 42. A gate insulating film between a gate electrode 8 and an active layer 14 consists of a main gate insulating film 45 of organic material and a subgate insulating pattern 52 containing ferroelectric material by a coating process for flattening, thus a gate-drain capacity Cgd and a storage capacitor 20 are increased. COPYRIGHT: (C)2007,JPO&INPIT |
