SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To make the dual gate of a semiconductor integrated circuit device wherein a high withstand voltage complementary MISFET and a low withstand voltage complementary MISFET are formed on the same semiconductor substrate. SOLUTION: An energy for implanting P ions to adjust a threshold voltage of a high withstand voltage p-channel MISFET is made larger than an energy for implanting B ions to adjust a threshold voltage of a high withstand voltage n-channel MISFET. In addition, when the B ions are implanted into an undoped silicon film in a p-channel MISFET formation area so as to convert it into a p-type silicon film 9p, the concentration of B of the p-type silicon film 9p adjacent to the boundary with a gate insulating film 8 is controlled to 2×1020atoms/cm3or less. COPYRIGHT: (C)2007,JPO&INPIT