| 摘要 |
A method for depressing growable foreign substances of a photomask is provided to prevent undesired pattern transfer in a photolithography process, form a pattern with a desired profile, and increase the process yield. The method for depressing growable foreign substances of a photomask comprises the steps of: forming a spacer material layer on the whole surface of a transparent substrate(100) having a phase shift layer pattern(110); and performing an anisotropic etching process for the spacer material layer to form a side wall spacer layer(132) on the side of the phase shift layer pattern(110) so as to expose the upside of the phase shift layer pattern(110) and the surface of the transparent substrate(100).
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