| 摘要 |
A semiconductor device is provided to eliminate the necessity for additionally performing a mask process and a channel top ion implantation process by forming a channel stop layer made of the same material as an isolation layer material in forming an isolation layer. First and second trenches are formed in a substrate(20), connected to each other. An isolation layer(26) is filled in the first trench to isolate adjacent devices from each other. A channel stop layer(25) is formed to bury the second trench. The second trench can be formed under the first trench. The isolation layer and the channel stop layer can be made of the same material.
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