A GROUP III-V COMPOUND SEMICONDUCTOR AND A METHOD FOR PRODUCING THE SAME

摘要

A group 111-V compound semiconductor is provided. The group 111-V compound semiconductor comprises an n-type layer (1), a p-type layer (7) represented by a formula In_aGa_bAl_cN, having a thickness of not less than 300 nm. and a multiple quantum well structure which exists between the n-type layer and the p-type layer, has at least two quantum well structures (4) including two barrier layers (5) and a quantum well layer represented by In_xGa_yAl_zN between the barrier layers; and a ratio of R/a of not more than 42.5 %, wherein R is an average mole fraction of indium nitride in the quantum well layer, which is measured by X-ray diffraction, and a is a mole fraction of indium nitride calculated from a wavelength of light emitted from the group 111-V compound semiconductor due to current injection.