| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for removing a level and a defect caused by stress from a single-crystal silicon thin film formed by an SOI technique. SOLUTION: The single-crystal silicon thin film 106 is formed by using the representative bonding SOI technique, such as Smart-Cut and ELTRAN. The single-crystal silicon thin film 106 is patterned as an island-shaped silicon layer 108 before thermal oxidation treatment is performed in an oxidizing atmosphere containing a halogen element, thus obtaining the island-shaped silicon layer 109 from which the trap level and defect are removed. COPYRIGHT: (C)2007,JPO&INPIT
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