| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory which can prevent malfunction of the device such as electric short-circuit between adjacent gates, and to provide a manufacturing method of the device. SOLUTION: A semiconductor substrate 11 is provided with a floating gate electrode 13 formed on an element region 21 separated by an element separation region 22 through a gate insulating film 12, an inter-gate insulating film 31 formed to cover a part from the upper face of the floating gate electrode 13 to a middle of a side, and a control gate electrode 32 formed on the floating gate electrode 13 through the inter-gate insulating film 31. A part covered with the inter-gate insulating film 31 on the side from the upper face of the floating gate electrode 13 has a tapered shape inclined from a vertical direction on the surface of the semiconductor substrate 11. A part which is not covered with the inter-gate insulating film 31 has a shape vertical to the surface of the semiconductor substrate 11. COPYRIGHT: (C)2007,JPO&INPIT
|
