| 摘要 |
Disclosed herein is a method of manufacturing a semiconductor device. The method includes forming an etch-stop film on a semiconductor substrate in which a predetermined structure is formed, and then forming an interlayer insulating film. The method also includes etching a predetermined region of the interlayer insulating film, and then stopping the etch process at the etch-stop film, to form a damascene pattern. The method employs an etch-stop film made of a material having a low dielectric constant. Accordingly, an increase in the capacitance due to an etch-stop film formed of the existing material having a high dielectric constant can be prevented. It is therefore possible to prevent a reduction of RC delay and also to accelerate the operating speed of devices.
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