发明名称 |
Method of chemical mechanical polishing with high throughput and low dishing |
摘要 |
Method and apparatus are provided for polishing conductive materials with low dishing of features and reduced or minimal remaining residues. In one aspect, a method is provided for processing a substrate by polishing the substrate to remove bulk conductive material and polishing the substrate by a ratio of carrier head rotational speed to platen rotational speed of between about 2:1 and about 3:1 to remove residual conductive material. In another aspect, a method is provided for processing a substrate including polishing the substrate at a first relative linear velocity between about 600 mm/second and about 1900 mm/second at the center of the substrate, and polishing the substrate at a second relative linear velocity between about 100 mm/second and about 550 mm/second at the center of the substrate.
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申请公布号 |
US7232761(B2) |
申请公布日期 |
2007.06.19 |
申请号 |
US20040924417 |
申请日期 |
2004.08.24 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
LI SHIJIAN;LI JUI-LUNG;WANG SHI-PING;LAM GARY;MAI DAVID;REDEKER FRED C. |
分类号 |
H01L21/461;B24B1/00;B24B5/00;B24B29/00;B24B37/04;C23F1/00;H01L21/306;H01L21/321;H01L21/4763;H01L21/768 |
主分类号 |
H01L21/461 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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