| 摘要 |
An isolated hole in a photoresist layer is formed by surrounding it with additional, somewhat narrower, dummy hole features. The ratio of feature width to resist thickness is adjusted so that, after development, there is no resist on the floor of the isolated (main) hole whereas a reduced, but finite, thickness of resist remains on the floors of the holes derived from the dummy features. The isolated hole may then be used for etching or electroplating the underlying substrate.
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