发明名称 Semiconductor device and method of manufacturing the same
摘要 A semiconductor device is provided including a semiconductor element having a plurality of electrodes, a plurality of bonding portions of a lead frame, a plate-like current path material which electrically connects at least one of the plurality of electrodes and one of the plurality of bonding portions, a housing which packages the semiconductor element having the plurality of electrodes, the plurality of bonding portions of the lead frame, and the current path material, wherein the plate-like current path material is arranged to be directly bonded to one of the plurality of electrodes and one of the plurality of bonding portions, and the middle portion of the current path material is formed apart from the surface of the semiconductor element. A method of manufacturing the same is also provided.
申请公布号 US7230322(B2) 申请公布日期 2007.06.12
申请号 US20050119745 申请日期 2005.05.03
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 FUNATO NORIHIDE;NANBA MASATAKA;SAWANO HIROSHI
分类号 H01L21/60;H01L23/495;H01L21/607;H01L23/48;H01L29/78 主分类号 H01L21/60
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