发明名称 METHOD OF FABRICATING IMAGE SENSOR PHOTODIODES USING A MULTI-LAYER SUBSTRATE AND CONTACT METHOD AND THE STRUCTURE THEREOF
摘要 <p>The present invention relates to a photodiode of an image sensor using a three-dimensional multi-layer substrate, and more particularly, to a method of implementing a buried type photodiode and a structure thereof, and a trench contact method for connecting a photodiode in a multi-layer substrate and a transistor for signal detection.</p>
申请公布号 WO2007061175(A1) 申请公布日期 2007.05.31
申请号 WO2006KR03625 申请日期 2006.09.12
申请人 HANVISION CO., LTD.;HANNEBAUER, ROBERT STEVEN 发明人 HANNEBAUER, ROBERT STEVEN
分类号 H01L27/146 主分类号 H01L27/146
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