发明名称 |
METHOD OF FABRICATING IMAGE SENSOR PHOTODIODES USING A MULTI-LAYER SUBSTRATE AND CONTACT METHOD AND THE STRUCTURE THEREOF |
摘要 |
<p>The present invention relates to a photodiode of an image sensor using a three-dimensional multi-layer substrate, and more particularly, to a method of implementing a buried type photodiode and a structure thereof, and a trench contact method for connecting a photodiode in a multi-layer substrate and a transistor for signal detection.</p> |
申请公布号 |
WO2007061175(A1) |
申请公布日期 |
2007.05.31 |
申请号 |
WO2006KR03625 |
申请日期 |
2006.09.12 |
申请人 |
HANVISION CO., LTD.;HANNEBAUER, ROBERT STEVEN |
发明人 |
HANNEBAUER, ROBERT STEVEN |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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