发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A nonvolatile semiconductor memory device includes a semiconductor substrate. Active regions are formed on the surface of the substrate, separated from one another by element separating regions and extend in a first direction. A first word line and a second word line extend in a second direction crossing the first direction. A pair of first select gate lines extend in the second direction between the first and second word lines. Memory cell transistors are each provided at each of intersections of the first and second word lines and the active regions on the surface of the substrate. First select gate transistors are each provided at each of intersections of the pair of first select gate lines and the active regions on the surface of the substrate. A first contact is provided between the pair of first select gate lines and contacts adjacent two of the active regions.
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申请公布号 |
US2007120166(A1) |
申请公布日期 |
2007.05.31 |
申请号 |
US20060550636 |
申请日期 |
2006.10.18 |
申请人 |
ARAI FUMITAKA;ICHIGE MASAYUKI |
发明人 |
ARAI FUMITAKA;ICHIGE MASAYUKI |
分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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