| 摘要 |
PROBLEM TO BE SOLVED: To compose a switching circuit of a transistor of a TOP side and a transistor of a BOTTOM side, and to operate the transistor of the TOP side at high speed to reduce a switching loss. SOLUTION: A first transistor Q1 includes: a source electrode 43 which is electrically connected to an n<SP>+</SP>-type source area 36 formed on a surface layer of a well area 35 inside a p-type well area 35; and a well electrode 46 which is formed to be electrically separated from the source electrode 43 and is electrically connected to the p-type well area 35. The well electrode 46 functions as an electrode to input a back gate bias to the first transistor Q1, a reference potential Vb is connected to the source electrode 43, and an output potential Va higher than the reference potential Vb is input to the well electrode 46. Thus, the threshold voltage of the first transistor Q1 is reduced by a back gate effect. COPYRIGHT: (C)2007,JPO&INPIT
|
