| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a process for fabricating a semiconductor element which can manufacture stably in a high yield, using laser scribing, and which can manufacture the semiconductor element by which a thermal resistance has been improved. <P>SOLUTION: The process for fabricating the semiconductor element includes a step of forming a semiconductor laminate 9 in the front surface side of a substrate 2, a step of forming a splitting groove 50 along with the perimeter of each semiconductor element which it is going to be divided by irradiating a laser beam from the back side 60 of the substrate 2 and laser scribing, and a step of breaking the substrate 2 along the splitting groove 50 and dividing into individual semiconductor elements 1, wherein there are deposits 52 adhering to the inside of the splitting groove 50 when the laser beam is irradiated and remaining in the periphery by the side of a backside 60 of the substrate 2 in each divided semiconductor element 1. Further, the process includes a step of removing a projection 52 projected from the substrate back surface of the semiconductor element 1 among the deposites 52 and flattening the substrate back surface of the semiconductor element 1 substantially all over the surface. <P>COPYRIGHT: (C)2007,JPO&INPIT |
