发明名称 CHEMICAL AMPLIFICATION TYPE POSITIVE PHOTORESIST COMPOSITION AND RESIST PATTERN FORMING METHOD
摘要 The present invention provides a chemical amplification type positive photoresist composition which is excellent in storage stability as a resist solution in a bottle A novolak resin or a hydroxystyrenic resin is reacted with a crosslinking agent to give a slightly alkali-soluble or alkali-insoluble resin having such a property that solubility in an aqueous alkali solution is enhanced in the presence of an acid, which is then dissolved in an organic solvent, together with (B) a compound generating an acid under irradiation with radiation to obtain a chemical amplification type positive photoresist composition wherein the content of an acid component is 10 ppm or less.
申请公布号 US2007117045(A1) 申请公布日期 2007.05.24
申请号 US20070622988 申请日期 2007.01.12
申请人 TOKYO OHKA KOGYO CO., LTD. 发明人 MARUYAMA KENJI;KURIHARA MASAKI;MIYAGI KEN;NIIKURA SATOSHI;SHIMATANI SATOSHI;MASUJIMA MASAHIRO;NITTA KAZUYUKI;YAMAGUCHI TOSHIHIRO;DOI KOUSUKE
分类号 G03C1/00;G03C1/492;G03F7/039 主分类号 G03C1/00
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